Search results for "plasma processing"
showing 7 items of 7 documents
Plasma Etching and Integration with Nanoprocessing
2009
This chapter introduces plasma etching—an extensive and perhaps the most widely used micro- and nanoprocessing method both in industry and in research and development laboratories worldwide. The emphasis is on the practical methods in plasma etching and reactive ion etching when used for submicron and nanoscale device fabrication. The principles of plasma etching and reactive ion etching equipment for sample fabrication will be introduced.
Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
2019
Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for the deposition of alumina, different chemicals have been investigated over the years to replace it. The authors have investigated the use of aluminum tri-isopropoxide (TIPA) as an alternative alkoxide precursor for the safe and cost-effective deposition of alumina. In this work, TIPA is used as a stable Al source for atomic layer deposition (ALD) of Al2O3 when different oxidizing agents including water, oxygen plasma, water plasma, and ozone are employed. The authors have explored the deposition of Al2O3 using TIPA in ALD systems operating in vacuum and atmospheric pressure conditions. For the…
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observe…
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
2014
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…
Cold plasma processing of powdered Spirulina algae for spore inactivation and preservation of bioactive compounds
2020
Abstract Technologies for controlling microbial risks in a heat and humidity sensitive food powder are still limited. To preserve bioactive compounds while inactivating Bacillus subtilis spores in powdered Spirulina microalgae (Arthrospira platensis) with a non-thermal atmospheric plasma is the challenge presented in this paper. Artificially contaminated powder was treated with a custom-made surface micro-discharge cold atmospheric pressure plasma (SMD-CAPP) at the effective, specific surface energy of the plasma (Es) of 7–15 mW/cm2. The inactivation of spores in air plasma was faster than in nitrogen plasma. The final effect after 5 min exposure time of close to 2 log10 reduction could be …
Porous inorganic–organic hybrid material by oxygen plasma treatment
2011
In this paper, we present the pore formation on inorganic–organic hybrid material, ORMOCER©, by reactive ion etching. ORMOCERs are composed of inorganic backbone where organic side groups are attached by cross-linking. Etching of ORMOCER in oxygen plasma generates porous materials with different pore sizes depending on the etching parameters. In addition to planar films, this pore formation process is applicable to micro and nanostructures. Characteristics of porous materials are evaluated by contact angle measurement, scanning electron microscopy, Fourier transform infrared-attenuated total reflectance spectroscopy, time-of-flight elastic recoil detection analysis and Rutherford backscatte…